Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE

III-nitride semiconductors have received significant research attention and undergone immense development due to their widely found applications in microelectronic and optoelectronic devices. Among them, GaN based materials promise great potential for high frequency, high power, and high temperature...

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Bibliographic Details
Main Author: Manvi Agrawal
Other Authors: K. Radhakrishnan
Format: Thesis
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:https://hdl.handle.net/10356/54999

Internet

https://hdl.handle.net/10356/54999

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