Nonvolatile resistive switching in metal oxides for the application in resistive random access memory
Resistive random access memory (ReRAM or memristor) based on the resistive switching (RS) has been proposed as a potential candidate for next generation nonvolatile memory with high density, fast write and erase access, low power operation, and excellent retention performance. Although most of the t...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/55364 |