Experimental and theoretical study of nanotwinned copper fabricated by pulse-reverse electrodeposition for interconnect and through-silicon via (TSV) technologies

Experimental and theoretical study of nanotwinned copper fabricated by pulse-reverse electrodeposition for interconnect and through-silicon via (TSV) technologies

Through-silicon via (TSV) copper interconnects of varying sizes and aspect ratios are fabricated using pulse and pulse-reversed electrodeposition techniques in deep reactive ion etched silicon vias. Mechanical properties of fabricated TSV are characterized by nanoindentation. The measurements show t...

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Bibliographic Details
Main Author: Lin, Nay
Other Authors: Miao Jianmin
Format: Thesis
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials::Electronic packaging materials
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:https://hdl.handle.net/10356/58947

Internet

https://hdl.handle.net/10356/58947

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