Gate-all-around silicon nanowire FET modeling
As a further extension of the multi-gate MOSFET, the gate-all-around (GAA) silicon nanowire FET is the most promising nanostructure design for next generation semiconductor device. Recent research work demonstrates the excellent device performance of GAA silicon nanowire FET, especially the gate con...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/59526 |