Effects of polyemitter crystal structure on the gain of a double poly bipolar transistor
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by replacing the emitter metal contact by a highly doped polysilicon layer. A number of works, both theoretical and experimental, investigating this effect, have been published. In all these studies, th...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/5968 |