Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/60541 |
| _version_ | 1811691931336441856 |
|---|---|
| author | Ong, Beng Sheng |
| author2 | Pey Kin Leong |
| author_facet | Pey Kin Leong Ong, Beng Sheng |
| author_sort | Ong, Beng Sheng |
| collection | NTU |
| description | Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other alternative channel materials need to be explored in order to enable ultra low-power and high-speed electronics. InxGa1-xAs with high electron mobility is considered a good replacement for n-type Si MOSFET. Alternate architectures such as FinFETs and nanowire transistors are considered for further performance enhancement and to suppress short channel effects. |
| first_indexed | 2024-10-01T06:27:44Z |
| format | Thesis |
| id | ntu-10356/60541 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:27:44Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/605412020-11-01T11:32:54Z Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach Ong, Beng Sheng Pey Kin Leong School of Electrical and Electronic Engineering Singapore-MIT Alliance Programme DRNTU::Engineering::Electrical and electronic engineering Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other alternative channel materials need to be explored in order to enable ultra low-power and high-speed electronics. InxGa1-xAs with high electron mobility is considered a good replacement for n-type Si MOSFET. Alternate architectures such as FinFETs and nanowire transistors are considered for further performance enhancement and to suppress short channel effects. Doctor of Philosophy (AMM and NS) 2014-05-28T04:08:24Z 2014-05-28T04:08:24Z 2012 2012 Thesis http://hdl.handle.net/10356/60541 en 200 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ong, Beng Sheng Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach |
| title | Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach |
| title_full | Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach |
| title_fullStr | Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach |
| title_full_unstemmed | Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach |
| title_short | Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach |
| title_sort | platform for multi gate inxga1 xas nanostructure nmosfet by top down approach |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | http://hdl.handle.net/10356/60541 |
| work_keys_str_mv | AT ongbengsheng platformformultigateinxga1xasnanostructurenmosfetbytopdownapproach |