A study of the electronic properties of III-V compound semiconductor integrated with silicon
This thesis presents systematic studies on monolithic heteroepitaxial integration of III-V compound semiconductor on Si substrate employing the graded Si1-xGex buffer layer. One of the essential growth procedures for antiphase boundary free GaAs/Ge growth is the pre-growth high-temperature in-situ a...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/10356/60691 |