Material characterization of AlGaN/GaN based HEMT structures
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in optoelectronic and microelectronic applications. This is based on nitrides having properties such as high mobility and high velocity of the electron-carriers. HEMTs (high electron mobility transistors)...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/60792 |