Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide
This dissertation covers the experimental analysis of probe mark bondability fo BiCMOS wafer where the bond pads of size 100 micrometer by 100 micrometer were subjected to a matrix of touchdown and overdrive settings at ambient temperature during the wafer probing process.
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| Format: | Abschlussarbeit |
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2008
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| Online Zugang: | http://hdl.handle.net/10356/6086 |