Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide
This dissertation covers the experimental analysis of probe mark bondability fo BiCMOS wafer where the bond pads of size 100 micrometer by 100 micrometer were subjected to a matrix of touchdown and overdrive settings at ambient temperature during the wafer probing process.
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/6086 |
| _version_ | 1826122125439664128 |
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| author | Loh, Chee Ping. |
| author2 | Zhong, Zhaowei |
| author_facet | Zhong, Zhaowei Loh, Chee Ping. |
| author_sort | Loh, Chee Ping. |
| collection | NTU |
| description | This dissertation covers the experimental analysis of probe mark bondability fo BiCMOS wafer where the bond pads of size 100 micrometer by 100 micrometer were subjected to a matrix of touchdown and overdrive settings at ambient temperature during the wafer probing process. |
| first_indexed | 2024-10-01T05:43:22Z |
| format | Thesis |
| id | ntu-10356/6086 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T05:43:22Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/60862023-03-11T17:21:10Z Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide Loh, Chee Ping. Zhong, Zhaowei School of Mechanical and Production Engineering DRNTU::Engineering::Manufacturing This dissertation covers the experimental analysis of probe mark bondability fo BiCMOS wafer where the bond pads of size 100 micrometer by 100 micrometer were subjected to a matrix of touchdown and overdrive settings at ambient temperature during the wafer probing process. Master of Science (Precision Engineering) 2008-09-17T11:06:27Z 2008-09-17T11:06:27Z 2003 2003 Thesis http://hdl.handle.net/10356/6086 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Manufacturing Loh, Chee Ping. Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide |
| title | Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide |
| title_full | Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide |
| title_fullStr | Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide |
| title_full_unstemmed | Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide |
| title_short | Probe mark bondability study for B6HFC wafer technology - in relation to die pad damage and exposed oxide |
| title_sort | probe mark bondability study for b6hfc wafer technology in relation to die pad damage and exposed oxide |
| topic | DRNTU::Engineering::Manufacturing |
| url | http://hdl.handle.net/10356/6086 |
| work_keys_str_mv | AT lohcheeping probemarkbondabilitystudyforb6hfcwafertechnologyinrelationtodiepaddamageandexposedoxide |