Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. T...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/10356/60872 |