Design of voltage and current reference circuits on SOI-CMOS for high temperature applications
A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. T...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/10356/60872 |
| _version_ | 1811682691481862144 |
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| author | Quek, Michelle Wei-Ling |
| author2 | Goh Wang Ling |
| author_facet | Goh Wang Ling Quek, Michelle Wei-Ling |
| author_sort | Quek, Michelle Wei-Ling |
| collection | NTU |
| description | A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. The power supply rejection ratio is about 81dB and 82dB respectively. The bandgap reference employs the voltage mode approach to obtain the output reference voltage. The current reference circuit is created using the same bandgap circuit bootstrapped to the two-stage amplifier. |
| first_indexed | 2024-10-01T04:00:52Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/60872 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:00:52Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/608722023-07-07T17:18:33Z Design of voltage and current reference circuits on SOI-CMOS for high temperature applications Quek, Michelle Wei-Ling Goh Wang Ling School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits A CMOS bandgap reference that is able to operate at high temperature of up to 225oC is designed using XFAB 1μm technology. The designed output reference of 1.179V achieves a box model temperature coefficient of 14.625ppm/oC with a folded cascode amplifier and 17.5ppm/oC with a two-stage amplifier. The power supply rejection ratio is about 81dB and 82dB respectively. The bandgap reference employs the voltage mode approach to obtain the output reference voltage. The current reference circuit is created using the same bandgap circuit bootstrapped to the two-stage amplifier. Bachelor of Engineering 2014-06-02T06:31:07Z 2014-06-02T06:31:07Z 2014 2014 Final Year Project (FYP) http://hdl.handle.net/10356/60872 en Nanyang Technological University 62 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Quek, Michelle Wei-Ling Design of voltage and current reference circuits on SOI-CMOS for high temperature applications |
| title | Design of voltage and current reference circuits on SOI-CMOS for high temperature applications |
| title_full | Design of voltage and current reference circuits on SOI-CMOS for high temperature applications |
| title_fullStr | Design of voltage and current reference circuits on SOI-CMOS for high temperature applications |
| title_full_unstemmed | Design of voltage and current reference circuits on SOI-CMOS for high temperature applications |
| title_short | Design of voltage and current reference circuits on SOI-CMOS for high temperature applications |
| title_sort | design of voltage and current reference circuits on soi cmos for high temperature applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
| url | http://hdl.handle.net/10356/60872 |
| work_keys_str_mv | AT quekmichelleweiling designofvoltageandcurrentreferencecircuitsonsoicmosforhightemperatureapplications |