Electrical characterization of metal oxide thin film transistors
Thin film transistors (TFTs) are one of the most important microelectronic components in flat panel displays. Hydrogenated amorphous silicon (a-Si:H) is the material of choice for the channel layer in TFTs used in liquid crystal displays (LCDs). This is due largely to its flexibility in its applicat...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/10356/60884 |