Growth and characterization of III-V quantum dots on SI-based substrate
This thesis presents a systematic study of InAs quantum dot (QD) growth on Sibased substrates. Two Si-based platforms were studied, namely the graded Si1-xGex/Si substrate which has a high threading dislocation density (~106cm-2), and the germaniumon- insulator (GeOI) platform which has a lower thr...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/61068 |