Growth and characterization of III-V quantum dots on SI-based substrate
This thesis presents a systematic study of InAs quantum dot (QD) growth on Sibased substrates. Two Si-based platforms were studied, namely the graded Si1-xGex/Si substrate which has a high threading dislocation density (~106cm-2), and the germaniumon- insulator (GeOI) platform which has a lower thr...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/61068 |
| _version_ | 1824453243555545088 |
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| author | Leong, Yu Yan |
| author2 | Eugene A Fitzgerald |
| author_facet | Eugene A Fitzgerald Leong, Yu Yan |
| author_sort | Leong, Yu Yan |
| collection | NTU |
| description | This thesis presents a systematic study of InAs quantum dot (QD) growth on Sibased
substrates. Two Si-based platforms were studied, namely the graded Si1-xGex/Si substrate which has a high threading dislocation density (~106cm-2), and the germaniumon- insulator (GeOI) platform which has a lower threading dislocation density (<105cm-2). Using the solid-source molecular beam epitaxy, a defect-free GaAs heteroepitaxy on Ge surface can be obtained by employing the low temperature migration enhanced epitaxy technique. QDs with high dot density were obtained by optimizing the growth parameters, such as the V/III ratio and the growth temperature. The photoluminescence of InAs QDs grown on GeOI showed a single-peak emission at 1.33μm with a line width of 36.3meV at room temperature. The promising optical performance enables the demonstration of the world first InAs QD LED on the GeOI substrate. The edge-emitting ridge waveguide LED structure with a 5-layer-QD active core emits at 1.312μm at 25oC. This is a memorable milestone for the monolithic growth of III-V QDs on a Si-platform. |
| first_indexed | 2024-10-01T07:57:16Z |
| format | Thesis |
| id | ntu-10356/61068 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:57:16Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/610682023-03-04T16:39:18Z Growth and characterization of III-V quantum dots on SI-based substrate Leong, Yu Yan Eugene A Fitzgerald Yoon Soon Fatt School of Materials Science & Engineering DRNTU::Engineering::Materials This thesis presents a systematic study of InAs quantum dot (QD) growth on Sibased substrates. Two Si-based platforms were studied, namely the graded Si1-xGex/Si substrate which has a high threading dislocation density (~106cm-2), and the germaniumon- insulator (GeOI) platform which has a lower threading dislocation density (<105cm-2). Using the solid-source molecular beam epitaxy, a defect-free GaAs heteroepitaxy on Ge surface can be obtained by employing the low temperature migration enhanced epitaxy technique. QDs with high dot density were obtained by optimizing the growth parameters, such as the V/III ratio and the growth temperature. The photoluminescence of InAs QDs grown on GeOI showed a single-peak emission at 1.33μm with a line width of 36.3meV at room temperature. The promising optical performance enables the demonstration of the world first InAs QD LED on the GeOI substrate. The edge-emitting ridge waveguide LED structure with a 5-layer-QD active core emits at 1.312μm at 25oC. This is a memorable milestone for the monolithic growth of III-V QDs on a Si-platform. DOCTOR OF PHILOSOPHY (MSE) 2014-06-04T06:45:10Z 2014-06-04T06:45:10Z 2013 2013 Thesis Leong, Y. Y. (2013). Growth and characterization of III-V quantum dots on SI-based substrate. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/61068 10.32657/10356/61068 en 140 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Leong, Yu Yan Growth and characterization of III-V quantum dots on SI-based substrate |
| title | Growth and characterization of III-V quantum dots on SI-based substrate |
| title_full | Growth and characterization of III-V quantum dots on SI-based substrate |
| title_fullStr | Growth and characterization of III-V quantum dots on SI-based substrate |
| title_full_unstemmed | Growth and characterization of III-V quantum dots on SI-based substrate |
| title_short | Growth and characterization of III-V quantum dots on SI-based substrate |
| title_sort | growth and characterization of iii v quantum dots on si based substrate |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/61068 |
| work_keys_str_mv | AT leongyuyan growthandcharacterizationofiiivquantumdotsonsibasedsubstrate |