Study of single crystal diamond schottky barrier diodes for power electronics applications

Study of single crystal diamond schottky barrier diodes for power electronics applications

Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107...

Full description

Bibliographic Details
Main Author: Arie Nawawi
Other Authors: Tseng King Jet
Format: Thesis
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:https://hdl.handle.net/10356/61611

Internet

https://hdl.handle.net/10356/61611

Similar Items