Study of single crystal diamond schottky barrier diodes for power electronics applications
Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107...
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| Format: | Thesis |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/61611 |
| _version_ | 1811692178126143488 |
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| author | Arie Nawawi |
| author2 | Tseng King Jet |
| author_facet | Tseng King Jet Arie Nawawi |
| author_sort | Arie Nawawi |
| collection | NTU |
| description | Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107 cm/s), and thermal conductivity (22-24 W/cm.K). This thesis focuses on the development, characterizations, analysis, modeling and simulations, and design optimizations of diamond Schottky barrier diode (SBD) for power electronics applications. Throughout the study, several p-type vertical diamond SBDs with Molybdenum Schottky contacts and different specifications have been fabricated and measured. Static and transient characteristics of the diamond SBDs at different temperatures were investigated based on the experimental results, theoretical considerations, and numerical simulations using finite-element physics-based Technology-Computer-Aided-Design (TCAD) Sentaurus software. The non-ideal behaviours of the experimental SBDs were analyzed and simulated based on the metal-interfacial layer-semiconductor model. Furthermore, investigations and design optimizations of the edge termination structures for diamond power SBD utilizing high-k oxide were presented. |
| first_indexed | 2024-10-01T06:31:39Z |
| format | Thesis |
| id | ntu-10356/61611 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:31:39Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/616112023-07-04T16:27:07Z Study of single crystal diamond schottky barrier diodes for power electronics applications Arie Nawawi Tseng King Jet School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107 cm/s), and thermal conductivity (22-24 W/cm.K). This thesis focuses on the development, characterizations, analysis, modeling and simulations, and design optimizations of diamond Schottky barrier diode (SBD) for power electronics applications. Throughout the study, several p-type vertical diamond SBDs with Molybdenum Schottky contacts and different specifications have been fabricated and measured. Static and transient characteristics of the diamond SBDs at different temperatures were investigated based on the experimental results, theoretical considerations, and numerical simulations using finite-element physics-based Technology-Computer-Aided-Design (TCAD) Sentaurus software. The non-ideal behaviours of the experimental SBDs were analyzed and simulated based on the metal-interfacial layer-semiconductor model. Furthermore, investigations and design optimizations of the edge termination structures for diamond power SBD utilizing high-k oxide were presented. DOCTOR OF PHILOSOPHY (EEE) 2014-06-17T02:50:08Z 2014-06-17T02:50:08Z 2014 2014 Thesis Arie Nawawi. (2014). Study of single crystal diamond schottky barrier diodes for power electronics applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/61611 10.32657/10356/61611 en 221 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Arie Nawawi Study of single crystal diamond schottky barrier diodes for power electronics applications |
| title | Study of single crystal diamond schottky barrier diodes for power electronics applications |
| title_full | Study of single crystal diamond schottky barrier diodes for power electronics applications |
| title_fullStr | Study of single crystal diamond schottky barrier diodes for power electronics applications |
| title_full_unstemmed | Study of single crystal diamond schottky barrier diodes for power electronics applications |
| title_short | Study of single crystal diamond schottky barrier diodes for power electronics applications |
| title_sort | study of single crystal diamond schottky barrier diodes for power electronics applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/61611 |
| work_keys_str_mv | AT arienawawi studyofsinglecrystaldiamondschottkybarrierdiodesforpowerelectronicsapplications |