Design and growth of high-power gallium nitride light-emitting diodes

Design and growth of high-power gallium nitride light-emitting diodes

In this dissertation, the InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been studied from multiple aspects including improvement of material quality, suppression of quantum confined Stark effect (QCSE), promotion of carrier transport, enhancement of current spreading, reduc...

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Bibliographic Details
Main Author: Zhang, Zihui
Other Authors: Hilmi Volkan Demir
Format: Thesis
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/61870

Internet

https://hdl.handle.net/10356/61870

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