Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy
GaN based high electron mobility transistors (HEMTs) have attracted great attention over the last two decades for the high power and high frequency applications due to their advantages of polarization induced high electron density, high break down field and high saturation electron velocity. Develo...
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| Format: | Thesis |
| Language: | English |
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2015
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| Online Access: | https://hdl.handle.net/10356/62076 |