On the "switching defects" in the SiON and high-k gate dielectrics subjected to bias-temperature stressing
Since 1960s, the most commonly cited model to explain NBTI (negative-bias-temperature-instability) mechanism was the Reaction-Diffusion (R-D) model which described the evolution of Si/ Si02 interface states (t..Ni1) contributing to NBTI based on a hydrogen-transport mechanism. However, there were st...
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| Format: | Thesis |
| Language: | English |
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2015
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| Online Access: | https://hdl.handle.net/10356/64784 |