Characterization of dynamic NBTI by ultra-fast charge pumping and ultra-fast switching method
Till very recently, the most well-known model used to explain the NBTI phenomenon is the reaction-diffusion (R-D) model, which describes the evolution of Si/SiO2 interface states (Nit) contributing to NBTI based on a hydrogen transport mechanism. However, there has been much on-going discussion rega...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/65268 |