ZrO2 as high-K gate dielectric for GaN-based transistors
GaN-based high electron mobility transistors (HEMTs) have shown their excellent performance in high power, high frequency and low noise applications. One of the critical issues that further limits the performance and reliability of GaN HEMTs is the high gate leakage current. The high gate leakage cu...
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| Format: | Thesis |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/66665 |