Study of sputtered tin schottky barrier diode for Gan-hemt applications
During the past two decades, GaN-based high electron mobility transistor (HEMT) has been identified to be a very promising transistor that is able to realize the applications of high voltage, high frequency, and high temperature and has drawn much research interest around the world. More recently, G...
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| Format: | Thesis |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/10356/68961 |