Study of sputtered tin schottky barrier diode for Gan-hemt applications
During the past two decades, GaN-based high electron mobility transistor (HEMT) has been identified to be a very promising transistor that is able to realize the applications of high voltage, high frequency, and high temperature and has drawn much research interest around the world. More recently, G...
Main Author: | Li, Kang |
---|---|
Other Authors: | Ng Geok Ing |
Format: | Thesis |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | http://hdl.handle.net/10356/68961 |
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