Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. The impressive intrinsic material parameters such as large bandgap, high s...
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| Format: | Thesis |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/69059 |