Electrical and structural characterization of GaN-based transistor structures
Abstract There are primarily two parts to this project. The first part consists of understanding High Electron Mobility Transistors (HEMT), Two Dimensional Electron Gas (2DEG), and Gallium Nitride properties. In the second part, Hall Effect Measurement, Atomic Force Microscopy (AFM) and Four Point...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/10356/69191 |