Gate-all-around vertical silicon nanowire (GAA-VSiNW) fets : junction and threshold voltage engineering for optimum performance and scalability
Gate-All-Around (GAA) Silicon nanowire (SiNW) is a structure with virtually “infinite” number of gates in close vicinity to the channel to provide the best gate-to-channel electrostatic control, and therefore drastically reduces the parasitic short channel effects leading to lower power dissipation...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/69465 |