The effects of silicon doping on the structural and electrical properties of III-nitrides grown by MBE
Group III-nitrides such as GaN, AlN and AlGaN alloys are gaining a lot of interest in the field of optoelectronics due to their ability to emit light from the infrared (Eg, InN =0.7 eV) to the deep ultra-violet (Eg,AlN = 6.2 eV) region of the spectrum. AlN and GaN are the most preferred materials...
Main Author: | |
---|---|
Other Authors: | |
Format: | Thesis |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/69510 |