The effects of silicon doping on the structural and electrical properties of III-nitrides grown by MBE
Group III-nitrides such as GaN, AlN and AlGaN alloys are gaining a lot of interest in the field of optoelectronics due to their ability to emit light from the infrared (Eg, InN =0.7 eV) to the deep ultra-violet (Eg,AlN = 6.2 eV) region of the spectrum. AlN and GaN are the most preferred materials...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/69510 |