Compact modeling for GaN HEMT devices
This thesis presents a compact model developed for generic High Electron Mobility Transistors (HEMTs). The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2-DEG) charge density, including the two lowest sub-bands of the triangular well in the strong inversion...
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| Format: | Thesis |
| Language: | English |
| Published: |
2017
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| Online Access: | http://hdl.handle.net/10356/70216 |