Characterization and analysis of AlGaN/GaN HEMTs on Si for high frequency application
AlGaN/GaN HEMTs are perfect candidates for high-frequency, high-voltage and high-power applications such as radar and wireless communication systems, DC-DC convertors, as well as cellular base stations. Intrinsic material parameters, which will be further elaborated in the report, allow it to be eff...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/70692 |