Random telegraphic noise of decananometer transistors
There has always been an assumption that after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect. However, this does not seem to hold true in the case of small area MOSFET. This study begins with an introduction to the fundamental understandings of a...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/71885 |