Random telegraphic noise of decananometer transistors
There has always been an assumption that after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect. However, this does not seem to hold true in the case of small area MOSFET. This study begins with an introduction to the fundamental understandings of a...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/71885 |
| _version_ | 1811682915172483072 |
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| author | Chng, Joanna Yan Ting |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Chng, Joanna Yan Ting |
| author_sort | Chng, Joanna Yan Ting |
| collection | NTU |
| description | There has always been an assumption that after voltage-accelerated stressing, the
pre-existing or time-zero oxide traps would not be affect. However, this does not seem
to hold true in the case of small area MOSFET.
This study begins with an introduction to the fundamental understandings of a
MOSFET, specifically p-MOSFET. Following which, an understanding of the behaviour
of oxide trapped charges. Lastly, to recognise the importance of this study, the author
briefly explains on Moore’s law and how in the near future, the trapping and de-trapping
of charges would have an increasing impact on the drain current.
The study was conducted on a p-MOSFET with channel width 120-nm and channel
length 60-nm. Eight sets of data were obtained, with two proving to not add any value
to the discussion.
Through the study and discussions, the author has shown that, with respect to the
device the study was conducted on, the assumption that the after voltage-accelerated
stressing, the pre-existing or time-zero oxide traps would not be affect, no longer holds
true. |
| first_indexed | 2024-10-01T04:04:25Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/71885 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:04:25Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/718852023-07-07T17:58:35Z Random telegraphic noise of decananometer transistors Chng, Joanna Yan Ting Ang Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering There has always been an assumption that after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect. However, this does not seem to hold true in the case of small area MOSFET. This study begins with an introduction to the fundamental understandings of a MOSFET, specifically p-MOSFET. Following which, an understanding of the behaviour of oxide trapped charges. Lastly, to recognise the importance of this study, the author briefly explains on Moore’s law and how in the near future, the trapping and de-trapping of charges would have an increasing impact on the drain current. The study was conducted on a p-MOSFET with channel width 120-nm and channel length 60-nm. Eight sets of data were obtained, with two proving to not add any value to the discussion. Through the study and discussions, the author has shown that, with respect to the device the study was conducted on, the assumption that the after voltage-accelerated stressing, the pre-existing or time-zero oxide traps would not be affect, no longer holds true. Bachelor of Engineering 2017-05-19T07:35:12Z 2017-05-19T07:35:12Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/71885 en Nanyang Technological University 69 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Chng, Joanna Yan Ting Random telegraphic noise of decananometer transistors |
| title | Random telegraphic noise of decananometer transistors |
| title_full | Random telegraphic noise of decananometer transistors |
| title_fullStr | Random telegraphic noise of decananometer transistors |
| title_full_unstemmed | Random telegraphic noise of decananometer transistors |
| title_short | Random telegraphic noise of decananometer transistors |
| title_sort | random telegraphic noise of decananometer transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | http://hdl.handle.net/10356/71885 |
| work_keys_str_mv | AT chngjoannayanting randomtelegraphicnoiseofdecananometertransistors |