Planar and non-gold metal stacks processes and conduction mechanisms for AlGaN/GaN high-electron-mobility transistors on silicon
AlGaN/GaN high-electron-mobility transistors (HEMTs) have demonstrated great potentials in high voltage and high frequency applications due to the advantage in their intrinsic material properties such as wide band gap, high electron saturation velocity, high sheet carrier density, etc. Conventionall...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/72250 |