Structural and electrical characterization of GaN based HEMT heterostructures on SiC
Group III-nitride semiconductors and its alloys has been the subject of intense research because of its wide range of applications in the field of microelectronics and optoelectronics. They are used in light emitting diodes, lasers, detectors, next generation wireless network base stations, satel...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/72586 |