Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications
In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI. Stress memorization techniqu...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/72734 |