Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications
In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI. Stress memorization techniqu...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/72734 |
| _version_ | 1811695178601201664 |
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| author | Yu, Bo |
| author2 | Ma Kaixue |
| author_facet | Ma Kaixue Yu, Bo |
| author_sort | Yu, Bo |
| collection | NTU |
| description | In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI.
Stress memorization technique (SMT) effects on ultra-wideband RF switch performance are investigated for the first time. Compared with the state of the arts, the designed SPDT switch, achieves the lowest insertion loss (< 2.1 dB up to 50 GHz), while the designed SP4T switch achieves the lowest insertion loss (< 2.6 dB) over DC to 35 GHz. The generation1 DPDT switch matrix achieves less than 2.5 dB insertion loss and higher than 32 dB isolation up to 30 GHz. A novel generation2 DPDT switch matrix, which is fabricated on recessed SOI top silicon and connected with through BOX contact (TBC) exhibits less than 2 dB insertion loss and higher than 34 dB isolation from DC to 35 GHz. |
| first_indexed | 2024-10-01T07:19:20Z |
| format | Thesis |
| id | ntu-10356/72734 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:19:20Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/727342023-07-04T17:31:09Z Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications Yu, Bo Ma Kaixue Yeo Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits In this research work, low insertion loss, high isolation, ultra-wideband single-pole double-throw (SPDT) switch, single-pole four-throw (SP4T) switch and double-pole double-throw (DPDT) switch matrix are designed with commercial 0.13-μm high-resistivity trap-rich SOI. Stress memorization technique (SMT) effects on ultra-wideband RF switch performance are investigated for the first time. Compared with the state of the arts, the designed SPDT switch, achieves the lowest insertion loss (< 2.1 dB up to 50 GHz), while the designed SP4T switch achieves the lowest insertion loss (< 2.6 dB) over DC to 35 GHz. The generation1 DPDT switch matrix achieves less than 2.5 dB insertion loss and higher than 32 dB isolation up to 30 GHz. A novel generation2 DPDT switch matrix, which is fabricated on recessed SOI top silicon and connected with through BOX contact (TBC) exhibits less than 2 dB insertion loss and higher than 34 dB isolation from DC to 35 GHz. Doctor of Philosophy (EEE) 2017-11-06T07:47:21Z 2017-11-06T07:47:21Z 2017 Thesis Yu, B. (2017). Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications. Doctoral thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/72734 10.32657/10356/72734 en 165 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Yu, Bo Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications |
| title | Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications |
| title_full | Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications |
| title_fullStr | Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications |
| title_full_unstemmed | Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications |
| title_short | Design of RF silicon on insulator (SOI) switches for ultra wideband wireless communication applications |
| title_sort | design of rf silicon on insulator soi switches for ultra wideband wireless communication applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
| url | http://hdl.handle.net/10356/72734 |
| work_keys_str_mv | AT yubo designofrfsilicononinsulatorsoiswitchesforultrawidebandwirelesscommunicationapplications |