Characterization of nanoscale conducting filament in high-k oxides by scanning tunneling microscopy and conductive atomic force microscopy
By virtue of its simple structure, high operating speed and scalability, the resistive memory or RRAM is deemed a promising alternative to the charge-based memory, which is now facing severe scaling challenges. Of particular interest is the HfO2 RRAM due to its immediate compatibility with mainstrea...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/72747 |