Physics-based compact modeling of quasi-ballistic transistors
This Ph.D. study deals with the development of physics-based compact models for advanced semiconductor devices with a focus on quasi-ballistic (QB) transistors. The initial part of the thesis deals with Fermi potential modeling of III-V (InGaAs)-based High Electron Mobility Transistors with rectangu...
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| Format: | Thesis |
| Language: | English |
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2017
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| Online Access: | http://hdl.handle.net/10356/72954 |