High efficiency integrated III-V-nitride solar cells on silicon-based substrates
Solar energy has a huge potential to reduce the world’s reliance on fossil fuels. However, due to the excess current wasted by the Ge sub-cell, the energy conversion efficiency of a typical lattice-matched triple junction (InGaP/Ga(In)As/Ge) photovoltaic (PV) cell can only reach 41% under concentrat...
| Hlavní autor: | |
|---|---|
| Další autoři: | |
| Médium: | Diplomová práce |
| Jazyk: | English |
| Vydáno: |
2018
|
| Témata: | |
| On-line přístup: | http://hdl.handle.net/10356/73332 |