Experimental study of AlGaN/GaN HEMT based devicesfor gas sensing applications
In recent times, gas sensing applications have seen an increased demand in both manufacturing industries and research studies. This project aims to study high electron mobility transistors (HEMT) and their abilities, as well as the properties of two dimensional electron gas (2DEG) and III nitrides,...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2018
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| Online Access: | http://hdl.handle.net/10356/76366 |