Studies of GaN-based diode characteristics
Gallium Nitride (GaN) based diodes are very attractive for high-frequency, high-power and sensing applications due to their inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. Hence, these diodes are very promising for the important basic bu...
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| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2019
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| Online Access: | http://hdl.handle.net/10356/77592 |