Analysis of high power gallium nitride based high electron mobility transistors for next generation electronics applications
AlGaN/GaN high electron mobility transistors (HEMTs) are being widely investigated and increasingly considered as a promising device for the next generation of power electronics and microwave applications because of their key characteristics like high breakdown voltage, high power density and high t...
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| Format: | Thesis |
| Language: | English |
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2019
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| Online Access: | http://hdl.handle.net/10356/79010 |