Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

Femtosecond optical pump–probe spectroscopy is employed to elucidate the band-selective ultrafast carrier dynamics of few-layer MoS2. Following narrowband resonant photoexcitation of the exciton A transition, the subpicosecond to picosecond relaxation dynamics of the electron and the hole at the K v...

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Bibliographic Details
Main Authors: Nie, Zhaogang, Long, Run, Teguh, Jefri S., Huang, Chung-Che, Hewak, Daniel W., Yeow, Edwin K. L., Shen, Zexiang, Prezhdo, Oleg V., Loh, Zhi-Heng
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Science::Chemistry
Online Access:https://hdl.handle.net/10356/79259
http://hdl.handle.net/10220/38793

Internet

https://hdl.handle.net/10356/79259
http://hdl.handle.net/10220/38793

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