Integration of TaOx-based resistive-switching element and GaAs diode
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/79340 http://hdl.handle.net/10220/19734 |