Integration of TaOx-based resistive-switching element and GaAs diode
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/79340 http://hdl.handle.net/10220/19734 |
| _version_ | 1811687863702519808 |
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| author | Chi, Dong Zhi Xu, Z. Tong, X. Yoon, S. F. Yeo, Y. C. Dalapati, G. K. Chia, Ching Kean |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Chi, Dong Zhi Xu, Z. Tong, X. Yoon, S. F. Yeo, Y. C. Dalapati, G. K. Chia, Ching Kean |
| author_sort | Chi, Dong Zhi |
| collection | NTU |
| description | We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V. |
| first_indexed | 2024-10-01T05:23:04Z |
| format | Journal Article |
| id | ntu-10356/79340 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:23:04Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/793402020-03-07T13:57:22Z Integration of TaOx-based resistive-switching element and GaAs diode Chi, Dong Zhi Xu, Z. Tong, X. Yoon, S. F. Yeo, Y. C. Dalapati, G. K. Chia, Ching Kean School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2014-06-13T03:00:30Z 2019-12-06T13:22:55Z 2014-06-13T03:00:30Z 2019-12-06T13:22:55Z 2013 2013 Journal Article Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Chia, C. K., Dalapati, G. K., et al. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials, 1(3), 032121-. 2166-532X https://hdl.handle.net/10356/79340 http://hdl.handle.net/10220/19734 10.1063/1.4820421 en APL materials © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Chi, Dong Zhi Xu, Z. Tong, X. Yoon, S. F. Yeo, Y. C. Dalapati, G. K. Chia, Ching Kean Integration of TaOx-based resistive-switching element and GaAs diode |
| title | Integration of TaOx-based resistive-switching element and GaAs diode |
| title_full | Integration of TaOx-based resistive-switching element and GaAs diode |
| title_fullStr | Integration of TaOx-based resistive-switching element and GaAs diode |
| title_full_unstemmed | Integration of TaOx-based resistive-switching element and GaAs diode |
| title_short | Integration of TaOx-based resistive-switching element and GaAs diode |
| title_sort | integration of taox based resistive switching element and gaas diode |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/79340 http://hdl.handle.net/10220/19734 |
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