Hybrid-mode SRAM sense amplifiers : new approach on transistor sizing

A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduces a completely different way of sizing the aspect ratio of the transistors on the data-path, hence realizing a current-voltage hybrid mode Sense Amplifier. Extensive post-layout simulations have prov...

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Bibliografiska uppgifter
Huvudupphovsmän: Do, Anh Tuan, Kong, Zhi Hui, Yeo, Kiat Seng
Övriga upphovsmän: School of Electrical and Electronic Engineering
Materialtyp: Journal Article
Språk:English
Publicerad: 2010
Ämnen:
Länkar:https://hdl.handle.net/10356/79962
http://hdl.handle.net/10220/6260