Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics

Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics

The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a...

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Bibliographic Details
Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Lee, Kwang Hong, Yoon, Soon Fatt
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Monolithic Integration
Mid-infrared Photodetector
Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/80650
http://hdl.handle.net/10220/50067

Internet

https://hdl.handle.net/10356/80650
http://hdl.handle.net/10220/50067

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