Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/80650 http://hdl.handle.net/10220/50067 |
| _version_ | 1811691148136153088 |
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| author | Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lee, Kwang Hong Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lee, Kwang Hong Yoon, Soon Fatt |
| author_sort | Jia, Bo Wen |
| collection | NTU |
| description | The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit array. The 50% cutoff detectable wavelength of this detector increased from 5.7 μm at 80 K to 6.3 μm at 200 K. An 80 K detectivity of 8.8 × 109 cmHz1/2 W–1 at 5.3 μm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation–recombination and surface leakage above 140 K, while it is only surface leakage from 120 to 40 K. |
| first_indexed | 2024-10-01T06:15:17Z |
| format | Journal Article |
| id | ntu-10356/80650 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:15:17Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/806502020-03-07T13:57:23Z Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lee, Kwang Hong Yoon, Soon Fatt School of Electrical and Electronic Engineering Singapore-MIT Alliance Programme Monolithic Integration Mid-infrared Photodetector Engineering::Electrical and electronic engineering The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit array. The 50% cutoff detectable wavelength of this detector increased from 5.7 μm at 80 K to 6.3 μm at 200 K. An 80 K detectivity of 8.8 × 109 cmHz1/2 W–1 at 5.3 μm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation–recombination and surface leakage above 140 K, while it is only surface leakage from 120 to 40 K. NRF (Natl Research Foundation, S’pore) Accepted version 2019-10-01T07:54:31Z 2019-12-06T13:53:56Z 2019-10-01T07:54:31Z 2019-12-06T13:53:56Z 2018 Journal Article Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., Lee, K. H., & Yoon, S. F. (2018). Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics. ACS Photonics, 5(4), 1512-1520. doi:10.1021/acsphotonics.7b01546 https://hdl.handle.net/10356/80650 http://hdl.handle.net/10220/50067 10.1021/acsphotonics.7b01546 en ACS Photonics This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsphotonics.7b01546 22 p. application/pdf |
| spellingShingle | Monolithic Integration Mid-infrared Photodetector Engineering::Electrical and electronic engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Lee, Kwang Hong Yoon, Soon Fatt Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics |
| title | Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics |
| title_full | Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics |
| title_fullStr | Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics |
| title_full_unstemmed | Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics |
| title_short | Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics |
| title_sort | monolithic integration of insb photodetector on silicon for mid infrared silicon photonics |
| topic | Monolithic Integration Mid-infrared Photodetector Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/80650 http://hdl.handle.net/10220/50067 |
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