Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material...

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Bibliographic Details
Main Authors: Lee, Kwang Hong, Bao, Shuyu, Lin, Yiding, Wang, Yue, Li, Wei, Zhang, Lin, Michel, Jurgen, Fitzgerald, Eugene A., Tan, Chuan Seng, Anantha, P.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Germanium
Silicon
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/81289
http://hdl.handle.net/10220/47457

Internet

https://hdl.handle.net/10356/81289
http://hdl.handle.net/10220/47457

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